Part number:
2SK2800
Manufacturer:
Hitachi Semiconductor
File Size:
52.19 KB
Description:
Silicon n channel mos fet.
* Low on-resistance R DS(on) = 15 mΩ typ.
* High speed switching
* Low drive current
* 4V gate drive device can be driven from 5V source Outline TO
* 220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2800 Absolute Maximum Ratings (Ta = 25°C) Item D
2SK2800
Hitachi Semiconductor
52.19 KB
Silicon n channel mos fet.
📁 Related Datasheet
2SK2802 - Silicon N Channel MOS FET
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ADE-208-537C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0. 2 Ω.
2SK2803 - MOSFET
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External dimensions 1 FM20
Absolute Maximum Ratings (Ta = 25ºC)
Symbol
Ratings
Unit
VDSS
450
V
VGSS
±30
V
ID
±3
A
* ID (.
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isc N-Channel MOSFET Transistor
2SK2803
FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
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2SK2804 - MOSFET
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2SK2804
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±5 ± 20 35 (Tc = 25ºC) 90 5 150 –55 to +15.
2SK2805 - MOSFET
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Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 15 ± 60 80 (Tc = 25ºC) 550 15 150 –55 to.
2SK2806 - N-channel MOS-FET
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2SK2806-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2806-01 - N-channel MOS-FET
(Fuji Electric)
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FAP-IIIB Series
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High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
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.
2SK2807-01L - N-channel MOS-FET
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High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
