2SK2805
Sanken ↗ electric
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2SK2800 - Silicon N Channel MOS FET
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2SK2800
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ADE-208-513G (Z) 8th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 15 mΩ typ.
2SK2802 - Silicon N Channel MOS FET
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2SK2803 - MOSFET
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2SK2803
External dimensions 1 FM20
Absolute Maximum Ratings (Ta = 25ºC)
Symbol
Ratings
Unit
VDSS
450
V
VGSS
±30
V
ID
±3
A
* ID (.
2SK2803 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK2803
FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
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2SK2804 - MOSFET
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2SK2804
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±5 ± 20 35 (Tc = 25ºC) 90 5 150 –55 to +15.
2SK2806 - N-channel MOS-FET
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2SK2806-01
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High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
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30V
.
2SK2806-01 - N-channel MOS-FET
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2SK2806-01
FAP-IIIB Series
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High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
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.
2SK2807-01L - N-channel MOS-FET
(Fuji Electric)
2SK2807-01L,S
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2807-01S - N-channel MOS-FET
(Fuji Electric)
2SK2807-01L,S
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> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
2SK2808 - N-channel MOS-FET
(Fuji Electric)
2SK2808-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran.
