2SK2200 - Silicon N Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2200
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2200
Chopper Regulator, DC−DC Converter and Motor Drive Application.
2SK2201 - Silicon N-Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2201
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2201
Chopper Regulator, DC/DC Converter and Motor Drive Application.
2SK2202 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
2SK2202
Silicon N-Channel MOS FET
ADE-208-089 A 2nd. Edition
Application
High speed power switching
Features
• • • • • Low on-resistance High speed.
2SK2203 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
2SK2203
Silicon N-Channel MOS FET
ADE-208-139 1st. Edition
Application
High speed power switching
Features
• • • • • Low on-resistance High speed s.
2SK2208 - MOSFET
(Sanken electric)
2SK2208
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±5 ± 20 75 (Tc = 25ºC) 400 5 150 –55 to +1.
2SK2209-01R - Power MOSFET
(Fuji Electric)
.
2SK2210 - Silicon N-Channel Power F-MOS
(Panasonic)
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn.
2SK2211 - Silicon N-Channel MOS FET
(Panasonic Semiconductor)
Silicon MOS FETs (Small Signal)
2SK2211
Silicon N-Channel MOS FET
Unit : mm
For switching
2.6±0.1
4.5±0.1 1.6±0.2
1.5±0.1
• Low ON-resistance RDS.
2SK2212 - Silicon N-Channel MOS FET
(Hitachi Semiconductor)
2SK2212
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current.
2SK2213-01L - N-channel MOS-FET
(Fuji Electric)
2SK2213-01L,S
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
