2SK2201 Datasheet, Transistor, Toshiba Semiconductor

PDF File Details

Part number:

2SK2201

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

766.39kb

Download:

📄 Datasheet

Description:

Silicon n-channel mos type field effect transistor.

2SK2201 Application

• Applications Unit: mm z 4 V gate drive z Low drain
• source ON-resistance : RDS (ON) = 0.28 Ω (typ.) z High forward transfer admittance

TAGS

2SK2201

Toshiba Semiconductor

📁 Related Datasheet

2SK2200 - Silicon N Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2200 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2200 Chopper Regulator, DC−DC Converter and Motor Drive Application.

2SK2202 - Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK2202 Silicon N-Channel MOS FET ADE-208-089 A 2nd. Edition Application High speed power switching Features • • • • • Low on-resistance High speed.

2SK2203 - Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st. Edition Application High speed power switching Features • • • • • Low on-resistance High speed s.

2SK2207 - MOSFET (Sanken electric)
2SK2207 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±3 ± 12 35 (Tc = 25ºC) 280 3 150 –55 to +1.

2SK2208 - MOSFET (Sanken electric)
2SK2208 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 900 ± 30 ±5 ± 20 75 (Tc = 25ºC) 400 5 150 –55 to +1.

2SK2209-01R - Power MOSFET (Fuji Electric)
.

2SK2210 - Silicon N-Channel Power F-MOS (Panasonic)
Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn.

2SK2211 - Silicon N-Channel MOS FET (Panasonic Semiconductor)
Silicon MOS FETs (Small Signal) 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 • Low ON-resistance RDS.

2SK2212 - Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK2212 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.

2SK2213-01L - N-channel MOS-FET (Fuji Electric)
2SK2213-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.