Part number:
2SK2802
Manufacturer:
Hitachi Semiconductor
File Size:
40.89 KB
Description:
Silicon n channel mos fet.
* Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA)
* 2.5V gate drive devices.
* Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage D
2SK2802
Hitachi Semiconductor
40.89 KB
Silicon n channel mos fet.
📁 Related Datasheet
2SK2800 - Silicon N Channel MOS FET
(Hitachi Semiconductor)
2SK2800
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-513G (Z) 8th. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 15 mΩ typ.
2SK2803 - MOSFET
(Sanken electric)
2SK2803
External dimensions 1 FM20
Absolute Maximum Ratings (Ta = 25ºC)
Symbol
Ratings
Unit
VDSS
450
V
VGSS
±30
V
ID
±3
A
* ID (.
2SK2803 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK2803
FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Static Drain-Source On-Res.
2SK2804 - MOSFET
(Sanken electric)
2SK2804
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±5 ± 20 35 (Tc = 25ºC) 90 5 150 –55 to +15.
2SK2805 - MOSFET
(Sanken electric)
2SK2805
Absolute Maximum Ratings
Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ± 15 ± 60 80 (Tc = 25ºC) 550 15 150 –55 to.
2SK2806 - N-channel MOS-FET
(Fuji Electric)
2SK2806-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2806-01 - N-channel MOS-FET
(Fuji Electric)
2SK2806-01
FAP-IIIB Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated
N-channel MOS-FET
30V
.
2SK2807-01L - N-channel MOS-FET
(Fuji Electric)
2SK2807-01L,S
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guara.
