2SK3316 Datasheet - Toshiba Semiconductor

2SK3316 N-Channel MOSFET

2SK3316 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3316 Switching Regulator Applications Fast reverse recovery time Low drain source ON resistance High forward transfer admittance Low leakage current Enhancement mode : trr = 60 ns (typ.) : RDS (ON) = 1.6 Ω (typ.) : |Yfs| = 3.8 S (typ.) Unit: mm Built-in high-speed free-wheeling diode : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteri.

2SK3316_ToshibaSemiconductor.pdf