2SK3310 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3310 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 4.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement model: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-sou
2SK3310_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SK3310
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
208.30 KB
Description:
N-channel mosfet.