2SK3466 Datasheet - Toshiba Semiconductor

2SK3466 N-Channel MOSFET

2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3466 Chopper Regulator Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: ïYfsï = 4.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 500 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current D.

2SK3466 Datasheet (222.95 KB)