2SK367 N-Channel MOSFET

Toshiba Semiconductor

Description

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Uni.

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Datasheet Specifications

Part number: 2SK367
Manufacturer: Toshiba ↗ Semiconductor
File Size: 628.86 KB
Datasheet: 2SK367_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* 2SK367 Unit: mm
* High breakdown voltage: VGDS =
* 100 V (min)
* High input impedance: IGSS =
* 1.0 nA (max) (VGS =
* 80 V)
* Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Dra

2SK367 Distributors

📁 Related Datasheet

2SK3673-01MR 2SK3674-01JS 2SK3674-01L 2SK3674-01S 2SK3674-01SJ 2SK3675-01

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2SK367 N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK367-like datasheet