Datasheet Details
Part number:
2SK367
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
628.86 KB
Description:
N-channel mosfet.
2SK367_ToshibaSemiconductor.pdf
2SK367_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SK367
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
628.86 KB
Description:
N-channel mosfet.
2SK367, N-Channel MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm High breakdown voltage: VGDS = 100 V (min) High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature
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