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2SK367 Datasheet - Toshiba Semiconductor

2SK367 N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK367 For Audio, High Voltage Amplifier and Constant Current Applications 2SK367 Unit: mm High breakdown voltage: VGDS = 100 V (min) High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature.

2SK367 Datasheet (628.86 KB)

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Datasheet Details

Part number:

2SK367

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

628.86 KB

Description:

N-channel mosfet.

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2SK367 N-Channel MOSFET Toshiba Semiconductor

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