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2SK3797 Datasheet - Toshiba Semiconductor

2SK3797 Silicon N-Channel MOSFET

2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3797 Unit: mm Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 2.

2SK3797 Datasheet (254.17 KB)

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Datasheet Details

Part number:

2SK3797

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

254.17 KB

Description:

Silicon n-channel mosfet.

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2SK3797 Silicon N-Channel MOSFET Toshiba Semiconductor

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