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2SK3799 Datasheet - Toshiba Semiconductor

2SK3799 N-Channel MOSFET

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3799 Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| = 6.0 S (typ.) Switching Regulator Applications z Low drain-source ON resistance z High forward transfer admittance z Low leakage current : IDSS = 100μA (max) (VDS = 720 V) z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate.

2SK3799 Features

* hat regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13

2SK3799_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3799

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

245.73 KB

Description:

N-channel mosfet.

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2SK3799 2SK3799 N-Channel MOSFET Toshiba Semiconductor