Datasheet4U Logo Datasheet4U.com

2SK3799 - N-Channel MOSFET

2SK3799 Description

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3799 Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| =.

2SK3799 Features

* hat regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-13

2SK3799 Applications

* z Low drain-source ON resistance z High forward transfer admittance z Low leakage current : IDSS = 100μA (max) (VDS = 720 V) z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Ga

📥 Download Datasheet

Preview of 2SK3799 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SK3793 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3794 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK3796 - N-Channel Junction Silicon FET (Sanyo Semicon Device)
  • 2SK3797 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3702 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3702JS - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK3703 - N-Channl Silicon MOSFET (Sanyo Semicon Device)
  • 2SK3704 - N-Channel MOSFET Transistor (Inchange Semiconductor)

📌 All Tags

N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor 2SK3799-like datasheet