2SK3798 Datasheet - Toshiba Semiconductor

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2SK3798 N-Channel MOSFET

2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Switching Regulator Applications <.

2SK3798_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3798

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

256.37 KB

Description:

N-Channel MOSFET

Applications

* Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ. ) High forward transfer admittance: |Yfs| = 2.8 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic

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2SK3798 N-Channel MOSFET Toshiba Semiconductor

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