Datasheet Specifications
- Part number
- 2SK3798
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 256.37 KB
- Datasheet
- 2SK3798_ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Switching Regulator Applications <.
Applications
* Low drain-source ON resistance: RDS (ON) = 2.5Ω (typ. ) High forward transfer admittance: |Yfs| = 2.8 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic2SK3798 Distributors
📁 Related Datasheet
📌 All Tags