
Part number:
2SK3798
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
256.37kb
Download:
Description:
N-channel mosfet.
2SK3798
Toshiba ↗ Semiconductor
256.37kb
N-channel mosfet.
📁 Related Datasheet
2SK3793 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3793
FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage
: VDSS= 100V(Min) ·Static Drain-Source On-Re.
2SK3793 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
DATA SHEET
..
MOS FIELD EFFECT TRANSISTOR
2SK3793
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3793 is N-channel MOS Fiel.
2SK3794 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
..
2SK3794
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3794 is N-channel MOS Fiel.
2SK3796 - N-Channel Junction Silicon FET
(Sanyo Semicon Device)
Ordering number : EN8636
2SK3796
..
SANYO Semiconductors
DATA SHEET
2SK3796
Applicatins
•
N-Channel Junction Silicon FET
Low-F.
2SK3796 - N-Channel JFET
(ON Semiconductor)
Ordering number : EN8636B
2SK3796
N-Channel JFET
30V, 0.6 to 3.0mA, 6.5mS, SMCP
http://onsemi.
Applications
• Low-frequency general-purpose am.
2SK3797 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3797
FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Re.
2SK3797 - Silicon N-Channel MOSFET
(Toshiba Semiconductor)
2SK3797
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
..
2SK3797
Unit: mm
Switching Regulator Applications
•.
2SK3798 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK3798,I2SK3798
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤3.5Ω. ·Enhancement mode:
Vth = 2.0 to4.0V (VDS .
2SK3799 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
..
2SK3799
Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| =.
2SK3799 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
2SK3799,I2SK3799
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤1.3Ω. ·Enhancement mode:
Vth = 2.0 to4.0V (VDS .