A1941
Toshiba ↗ Semiconductor
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2sa1941.
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1941
Power Amplifier Applications
2SA1941
Unit: mm
* High breakdown voltage: VCEO = <.
📁 Related Datasheet
A1940 - 2SA1940
(Toshiba)
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1940
Power Amplifier Applications
2SA1940
Unit: mm
• Complementary to 2SC5197
• Remended f.
A1941 - POWER TRANSISTORS
(CDIL)
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
POWER TRANSISTORS
A1941 C5198
(9TW) (9TW)
PNP NPN
TO- .
A1941 - 2SA1941
(SavantIC)
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1941
DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198
A.
A1942 - 2SA1942
(Toshiba Semiconductor)
2SA1942
TOSHIBA Transistor Silicon PNP Triple Diffused Type
..
2SA1942
Power Amplifier Applications
• • • High breakdown voltage: VC.
A19420 - High-Accuracy Hall-Effect Transmission Speed Sensor
(Allegro)
A19420
High-Accuracy Hall-Effect Transmission Speed Sensor IC
FEATURES AND BENEFITS
• Differential Hall-effect sensor measures ring magnets and ferro.
A1943 - 2SA1943
(Toshiba)
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1943
Power Amplifier Applications
2SA1943
Unit: mm
• High collector voltage: VCEO = −230 V (m.
A1943 - TO-3P Plastic-Encapsulate Transistors
(JCST)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-3P Plastic-Encapsulate Transistors
2SA1943 TRANSISTOR (PNP)
FEATURES z High Collector Current C.
A1948 - PNP Transistors
(Kexin)
SMD Type
Transistors
PNP Transistors 2SA1948
SOT-89
■ Features
● Collector Current Capability IC=-0.1A ● Collector Emitter Voltage VCEO=-120V ● Com.
A19-1 - 10 TO 1000 MHz CASCADABLE AMPLIFIER
(Tyco)
A19-1/SMA19-1
10 TO 1000 MHz CASCADABLE AMPLIFIER · HIGH OUTPUT POWER: +22.5 dBm (TYP.) · HIGH THIRD ORDER I.P.: +35 dBm (TYP.) · MEDIUM NOISE FIGURE:.
