A1941 Datasheet - Toshiba Semiconductor

A1941 2SA1941

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO

A1941_ToshibaSemiconductor.pdf