Part number:
A1930
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
132.62 KB
Description:
2sa1930.
A1930-ToshibaSemiconductor.pdf
Datasheet Details
A1930-ToshibaSemiconductor.pdf
Datasheet Details
Part number:
A1930
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
132.62 KB
Description:
2sa1930.
A1930, 2SA1930
2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VE
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