A1942 Datasheet - Toshiba Semiconductor

A1942 2SA1942

2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type www.DataSheet4U.com 2SA1942 Power Amplifier Applications High breakdown voltage: VCEO = 160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25.

A1942_ToshibaSemiconductor.pdf