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A1972 Datasheet - Toshiba Semiconductor

A1972, 2SA1972

www.DataSheet.co.kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm * High.
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A1972-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

A1972

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

238.81 KB

Description:

2SA1972

Features

* military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese For

Applications

* Unit: mm
* High breakdown voltage: VCEO =
* 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC P

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