TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 2 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC5175 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur
Datasheet Details
Part number:
A1933
Manufacturer:
File Size:
125.85 KB
Description:
2sa1933.