C3279 Datasheet (Toshiba Semiconductor)

C3279, 2SC3279

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Col