C3279 Datasheet - Toshiba Semiconductor

C3279, 2SC3279

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications * High .

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C3279-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

C3279

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

104.56 KB

Description:

2SC3279

Applications

* Medium Power Amplifier Applications
* High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ. ) (VCE = 1 V, IC = 2 A)
* Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Unit: mm Maximum Ratings (Ta = 2

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