CMZ39, CMZ12 Datasheet (Toshiba Semiconductor) - Silicon Diffused Type Zener Diode

CMZ39, CMZ12, Silicon Diffused Type Zener Diode

○ Surge absorber CMZ12 to CMZ51 TOSHIBA Zener Diode Silicon Diffused Type CMZ12 to CMZ51 Unit: mm Average power dissipation : P = 2 W Zener voltage : VZ = 12 to 51 V Suitable for compact assembly due to small surface mount package “M FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Power dissipation Symbol Rating Unit P 2 (Note 1) W 1.

Anode 2.

Cathode Junction temperature Tj 40 to 150 °C Storage temper

CMZ39 Features

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