DF2B7M3SL Datasheet - Toshiba Semiconductor

DF2B7M3SL ESD Protection Diodes

ESD Protection Diodes Silicon Epitaxial Planar DF2B7M3SL DF2B7M3SL 1. General The DF2B7M3SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2B7M3SL provide to protect the latter part well by the low dynamic resistance, improve the system reliability level by the high VESD performance. Furthermore, it is optimum for antenna application for the low capacitance perfo.

DF2B7M3SL Features

* (1) Suitable for use with a 5 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±12 kV (Contact), VESD = ±15 kV (Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.7 Ω (typ.)) (4) Compact

DF2B7M3SL-ToshibaSemiconductor.pdf