Datasheet Specifications
- Part number
- DF2S6M4SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 369.89 KB
- Datasheet
- DF2S6M4SL-ToshibaSemiconductor.pdf
- Description
- ESD Protection Diodes
Description
ESD Protection Diodes Silicon Epitaxial Planar DF2S6M4SL DF2S6M4SL 1.General The DF2S6M4SL is a TVS diode (ESD protection diode) protects semicondu.Features
* (1) Suitable for use with a 5 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.3 Ω (typ. )) (4) Snapback characteristicApplications
* to protect against static electricity and noise. Utilizing snapback characteristics, the DF2S6M4SL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2S6M4SL is housed in an ultrDF2S6M4SL Distributors
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