DF3A6.8FE Datasheet - Toshiba Semiconductor

DF3A6.8FE Diodes

www.DataSheet4U.com DF3A6.8FE TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type DF3A6.8FE Diodes for Protecting Against ESD Unit in mm l Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. l Zener voltage correspond to E24 series. Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 100 125 55~125 Unit mW.

DF3A6.8FE Datasheet (112.99 KB)