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GT15M321 Datasheet - Toshiba Semiconductor

GT15M321 Silicon N-Channel IGBT

GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement Mode l High Speed l Low Saturation Voltage : tf = 0.20 µs (TYP.) (IC = 15 A) : VCE (sat) = 1.8V (TYP.) (IC = 15A) Unit: mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector Emitter Voltage Gate-Emitter Voltage Collector Current Emitter Collector Foward Current Collector Power.

GT15M321 Datasheet (256.59 KB)

Preview of GT15M321 PDF

Datasheet Details

Part number:

GT15M321

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

256.59 KB

Description:

Silicon n-channel igbt.

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GT15M321 Silicon N-Channel IGBT Toshiba Semiconductor

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