GT15M321 Datasheet - Toshiba Semiconductor

GT15M321, Silicon N-Channel IGBT

GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS l The 4th Generation l FRD Inclu.

Applications

* l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement
* Mode l High Speed l Low Saturation Voltage : tf = 0.20 µs (TYP. ) (IC = 15 A) : VCE (sat) = 1.8V (TYP. ) (IC = 15A) Unit: mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector
* Emitter Voltage Gate-Emitter

GT15M321-ToshibaSemiconductor.pdf