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GT25G101 Datasheet - Toshiba Semiconductor

GT25G101 Silicon N-Channel IGBT

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC 1ms Ta=25°C Tc=25°C SYMBOL VCES VGES IC ICP PC.

GT25G101 Datasheet (194.71 KB)

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Datasheet Details

Part number:

GT25G101

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

194.71 KB

Description:

Silicon n-channel igbt.

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GT25G101 Silicon N-Channel IGBT Toshiba Semiconductor

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