GT25G101 Silicon N-Channel IGBT

Toshiba Semiconductor

Description

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N *CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Sat.

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Datasheet Specifications

Part number: GT25G101
Manufacturer: Toshiba ↗ Semiconductor
File Size: 194.71 KB
Datasheet: GT25G101_ToshibaSemiconductor.pdf
Description: Silicon N-Channel IGBT

Applications

* l High Input Impedance l Low Saturation Voltage l Enhancement
* Mode l 20V Gate Drive : VCE (sat)=8V (Max. ) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector
* Emitter Voltage Gate
* Emitter Voltage Collector Current Collector Power Dissipation Junction Tempe

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GT25G101 Silicon N-Channel IGBT Toshiba Semiconductor

Toshiba Semiconductor GT25G101-like datasheet