Datasheet4U Logo Datasheet4U.com

GT25G101 Datasheet - Toshiba Semiconductor

GT25G101 Silicon N-Channel IGBT

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC 1ms Ta=25°C Tc=25°C SYMBOL VCES VGES IC ICP PC.

GT25G101_ToshibaSemiconductor.pdf

Preview of GT25G101 PDF
GT25G101 Datasheet Preview Page 2 GT25G101 Datasheet Preview Page 3

Datasheet Details

Part number:

GT25G101

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

194.71 KB

Description:

Silicon n-channel igbt.

GT25G101 Distributor

📁 Related Datasheet

GT25G101SM Silicon N-Channel IGBT (Toshiba Semiconductor)

GT25G102 Silicon N-Channel IGBT (Toshiba Semiconductor)

GT25G102SM Silicon N-Channel IGBT (Toshiba Semiconductor)

GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)

GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET (GTM)

GT25C01 SPI 2K Bits Serial EEPROM (Giantec Semiconductor)

GT25C02 SPI 2K Bits Serial EEPROM (Giantec Semiconductor)

GT25C04 SPI 4K Bits Serial EEPROM (Giantec Semiconductor)

TAGS

GT25G101 GT25G101 Silicon N-Channel IGBT Toshiba Semiconductor