JDH2S01FS Datasheet - Toshiba Semiconductor

JDH2S01FS UHF Band Mixer

JDH2S01FS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01FS UHF Band Mixer ｶｿｰﾄﾞﾏｰｸ Unit: mm Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting 0.6±0.05 0.1 0.8±0.05 A Characteristic Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 55~125 Unit V mA °C °C 0.07 M 0.1 A 0.2 ±0.05 0.1±0.05 0.48 +0.02 -0.03 .

JDH2S01FS_ToshibaSemiconductor.pdf