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JDH3D01S Datasheet - Toshiba Semiconductor

JDH3D01S - Diode Silicon Epitaxial Schottky Barrier Type

JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 55~125 Unit V mA °C °C 1.

1 ANODE1 1 SSM アノード 2.

CATHODE2 Note: Using continuously under heavy loads (e.g.

the application of high temperature/current/voltage and the significant change in temperature

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Datasheet Details

Part number:

JDH3D01S

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

168.84 KB

Description:

Diode silicon epitaxial schottky barrier type.

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