JDH3D01S Datasheet - Toshiba Semiconductor

JDH3D01S Diode Silicon Epitaxial Schottky Barrier Type

JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 55~125 Unit V mA °C °C 1. 1 ANODE1 1 SSM ｱﾉｰﾄﾞ 2. CATHODE2 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature.

JDH3D01S_ToshibaSemiconductor.pdf