JDH2S02FS Datasheet - Toshiba Semiconductor

JDH2S02FS UHF Band Mixer

JDH2S02FS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S02FS UHF Band Mixer Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting Unit: mm 0.6±0.05 0.1 0.8±0.05 A Characteristic Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 10 10 125 55~125 Unit V mA °C °C 0.07 M 0.1 A 0.2 ±0.05 0.1±0.05 0.48 +0.02 -0.03 Note: Using continuou.

JDH2S02FS_ToshibaSemiconductor.pdf