JDH2S01T Datasheet - Toshiba Semiconductor

JDH2S01T UHF Band Mixer

JDH2S01T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01T UHF Band Mixer Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Maximum (peak) reverse voltage Forward current Junction temperature Storage temperature range Symbol VRM IF Tj Tstg Rating 5 30 125 -55~125 Unit V mA °C °C JEDEC JEITA TOSHIBA ― ― 1-1H1A Electrical Characteristics (Ta = 25°C) Characteristi.

JDH2S01T_ToshibaSemiconductor.pdf