Part number:
K10A60W
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
241.10 KB
Description:
Silicon n-channel mosfet.
K10A60W-ToshibaSemiconductor.pdf
Datasheet Details
K10A60W Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolu
K10A60W-ToshibaSemiconductor.pdf
Datasheet Details
K10A60W
Toshiba ↗ Semiconductor
241.10 KB
Silicon n-channel mosfet.
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