K10A60W - Silicon N-Channel MOSFET

Datasheet Summary

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10A60W 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipa.

Toshiba Semiconductor

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Datasheet Details

Part number	K10A60W
Manufacturer	Toshiba Semiconductor
File Size	241.10 KB
Description	Silicon N-Channel MOSFET
Datasheet	K10A60W Datasheet
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MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10A60W 1: Gate 2: Drain 3: Source TO-220SIS 4.

Published: Jan 5, 2015 |