K3842 Datasheet - Toshiba Semiconductor

K3842 2SK3842

2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) =4.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 93 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) .

K3842 Features

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K3842_ToshibaSemiconductor.pdf