www.DataSheet4U.com 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3868 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate volta
K3868_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
K3868
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
255.08 KB
Description:
2sk3868.