K3869 Datasheet - Toshiba Semiconductor

K3869 2SK3869

2SK3869 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3869 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-sour.

K3869 Features

* nintended U

K3869-ToshibaSemiconductor.pdf