Datasheet4U Logo Datasheet4U.com

K8A60DA - Silicon N-Channel MOSFET

📥 Download Datasheet

Datasheet preview – K8A60DA

Datasheet Details

Part number K8A60DA
Manufacturer Toshiba Semiconductor
File Size 191.28 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet K8A60DA Datasheet
Additional preview pages of the K8A60DA datasheet.

📁 Similar Datasheet

  • K8A1215EBC - 512Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A1215ETC - 512Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A1215EZC - 512Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A1315EBC - 512Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A1315ETC - 512Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A1315EZC - 512Mb C-die NOR FLASH (Samsung semiconductor)
  • K8A50D - Silicon N-Channel MOSFET (Toshiba)
  • K8A55DA - TK8A55DA (Toshiba)
  • K8A5615EBA - Flash Memory (Samsung Electronics)
  • K8A5615ETA - Flash Memory (Samsung Electronics)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg 600 V ±30 V 7.5 A 30 45 W 270 mJ 7.
Published: |