K8A60DA Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

TK8A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK8A60DA Switching Regulator Applications * Low drain-source ON .

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Datasheet Specifications

Part number: K8A60DA
Manufacturer: Toshiba ↗ Semiconductor
File Size: 191.28 KB
Datasheet: K8A60DA-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Applications

* Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ. )
* High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
* Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rating

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K8A60DA Silicon N-Channel MOSFET Toshiba Semiconductor

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