SSM3K102TU Datasheet | Toshiba

.. TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications - - 1.8V drive Low on-resistance: Ron = 154mΩ (max) (@VGS = 1.8 V) Ron = 99mΩ (max) (@VGS = 2.5 V) Ron = 71mΩ (max) (@VGS = 4.0 V) 0.65±0.05 Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 12 2.6 5.2 800 500 150 - 55~150 Unit V V A m W °C °C 2.0±0.1 1 2 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on ceramic board. 2 (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm ) Note 2: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) Note: UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.6 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss ton toff VDSF Test Conditions ID = 1 m A, VGS = 0 ID = 1 m A, VGS = - 12 V VDS = 20 V, VGS = 0 VGS = ±12V, VDS = 0 VDS = 3 V, ID = 1 m A VDS = 3 V, ID = 1.0 A ID = 1.0 A, VGS = 4.0 V Drain-Source on-resistance ID = 0.5 A, VGS = 2.5 V ID = 0.2 A, VGS = 1.8 V Input capacitance Output capacitance...