SSM3K102TU Datasheet (Toshiba Semiconductor) - High Speed Switching Applications

SSM3K102TU, High Speed Switching Applications

www.DataSheet4U.com SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications 1.8V drive Low on-resistance: Ron = 154mΩ (max) (@VGS = 1.8 V) Ron = 99mΩ (max) (@VGS = 2.5 V) Ron = 71mΩ (max) (@VGS = 4.0 V) 0.65±0.05 Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature