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SSM6L11TU Silicon Dual-Channel MOSFET

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Description

SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications * Optimum for high-density.

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Applications

* Optimum for high-density mounting in small packages
* Low ON-resistance Q1: RDS(ON) = 395mΩ (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) 2.1±0.1 1.7±0.1 Unit: mm +0.1 0.3-0.05 Characteristics Symbol Rating Unit Drai

SSM6L11TU Distributors

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SSM6L11TU Silicon Dual-Channel MOSFET Toshiba Semiconductor
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