SSM6L11TU Datasheet - Toshiba Semiconductor

SSM6L11TU Silicon Dual-Channel MOSFET

SSM6L11TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L11TU High Speed Switching Applications Optimum for high-density mounting in small packages Low ON-resistance Q1: RDS(ON) = 395mΩ (max) (@VGS = 1.8 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) 2.1±0.1 1.7±0.1 Unit: mm +0.1 0.3-0.05 Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ± 12 V Drain current DC .

SSM6L11TU_ToshibaSemiconductor.pdf