* PARAMETER -50 tCK tRC tRAC Clock Cycle Time (min) CL = 3 CL = 4 5.5 ns 5 ns 25 ns 22 ns 190 mA 2 mA 3 mA TC59LM814/06 -60 6.5 ns 6 ns 30 ns 26 ns 170 mA 2 mA 3 mA Random Read/Write Cycle Time (min) Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max)
TC59LM814CFT Datasheet (519.05 KB)
TC59LM814CFT
Toshiba ↗ Semiconductor
519.05 KB
(tc59lm806cft / tc59lm814cft) 256m-bits network fcram1.
( DataSheet : www.DataSheet4U.com )
TC59LM814/06CFT-50,-60
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
256Mbits Network FCRAM1
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