Datasheet Specifications
- Part number
- TC59LM836DMB
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 0.96 MB
- Datasheet
- TC59LM836DMB_ToshibaSemiconductor.pdf
- Description
- Network FCRAM
Description
( DataSheet : www.DataSheet4U.com ) TC59LM836DMB-30,-33,-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 2,097,152-WORDS ×.
Features
* PARAMETER CL = 4 tCK tRC tRAC Clock Cycle Time (min) Random Read/Write Cycle Time (min) Random Access Time (max) CL = 5 CL = 6 -30 4.0 ns 3.33 ns 3.0 ns 20.0 ns 20.0 ns 380 mA 80 mA 10 mA TC59LM836DMB -33 4.5 ns 3.75 ns 3.33 ns 22.5 ns 22.5 ns 360 mA 75 mA 10 mA -40 5.0 ns 4.5 ns 4.0 ns 25 ns 25 nsTC59LM836DMB Distributors
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