Datasheet4U Logo Datasheet4U.com

TC59LM906AMG-37

MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

TC59LM906AMG-37 Features

* PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max) TC59LM914/06 -37 5.5 ns 4.5 ns 3.75 ns 22.5 ns 22.0 ns 280 mA 90 m

TC59LM906AMG-37 General Description

Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized as 4,194,304-words × 8 banks × 16 bits, TC59LM906AMG is organized as 8,388,608-words × 8 banks × 8 .

TC59LM906AMG-37 Datasheet (770.12 KB)

Preview of TC59LM906AMG-37 PDF

Datasheet Details

Part number:

TC59LM906AMG-37

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

770.12 KB

Description:

Mos digital integrated circuit silicon monolithic.
TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC www.DataSheet4U.com 512Mbits Network FCRAM1 (SSTL_18 / HST.

📁 Related Datasheet

TC59LM906AMG-50 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC (Toshiba Semiconductor)
TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC .. 512Mbits Network FCRAM1 (SSTL_18 / HST.

TC59LM905AMB - Network FCRAM (Toshiba Semiconductor)
( DataSheet : .. ) TC59LM913/05AMB-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 8,388,608-WORD.

TC59LM913AMB - (TC59LM905AMB / TC59LM913AMB) Network FCRAM (Toshiba Semiconductor)
( DataSheet : .. ) TC59LM913/05AMB-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TM 8,388,608-WORD.

TC59LM914AMG-37 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC (Toshiba Semiconductor)
TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC .. 512Mbits Network FCRAM1 (SSTL_18 / HST.

TC59LM914AMG-50 - MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC (Toshiba Semiconductor)
TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC .. 512Mbits Network FCRAM1 (SSTL_18 / HST.

TC59LM806BFT - Double Data Fast Cycle RAM (Toshiba Semiconductor)
( DataSheet : .. ) .. .. .

TC59LM806CFT - 256M-bits Network FCRAM1 (Toshiba Semiconductor)
( DataSheet : .. ) TC59LM814/06CFT-50,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194.

TC59LM814BFT - Double Data Fast Cycle RAM (Toshiba Semiconductor)
( DataSheet : .. ) .. .. .

TAGS

TC59LM906AMG-37 MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Toshiba Semiconductor

Image Gallery

TC59LM906AMG-37 Datasheet Preview Page 2 TC59LM906AMG-37 Datasheet Preview Page 3

TC59LM906AMG-37 Distributor