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TC59LM906AMG-50, TC59LM906AMG Datasheet - Toshiba Semiconductor

TC59LM906AMG-50 MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle Random Access Memory (Network FCRAMTM) containing 536,870,912 memory cells. TC59LM914AMG is organized as 4,194,304-words × 8 banks × 16 bits, TC59LM906AMG is organized as 8,388,608-words × 8 banks × 8 .

TC59LM906AMG-50 Features

* PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max) TC59LM914/06 -37 5.5 ns 4.5 ns 3.75 ns 22.5 ns 22.0 ns 280 mA 90 m

TC59LM906AMG_ToshibaSemiconductor.pdf

This datasheet PDF includes multiple part numbers: TC59LM906AMG-50, TC59LM906AMG. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC59LM906AMG-50, TC59LM906AMG

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

770.12 KB

Description:

Mos digital integrated circuit silicon monolithic.

Note:

This datasheet PDF includes multiple part numbers: TC59LM906AMG-50, TC59LM906AMG.
Please refer to the document for exact specifications by model.

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TAGS

TC59LM906AMG-50 TC59LM906AMG MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Toshiba Semiconductor

TC59LM906AMG-50 Distributor