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TC59LM906AMG-50, TC59LM906AMG MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

TC59LM906AMG-50 Description

TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC www.DataSheet4U.com 512Mbits Network FCRAM1 (SSTL_18 / HST.
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory.

TC59LM906AMG-50 Features

* PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max) TC59LM914/06 -37 5.5 ns 4.5 ns 3.75 ns 22.5 ns 22.0 ns 280 mA 90 m

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This datasheet PDF includes multiple part numbers: TC59LM906AMG-50, TC59LM906AMG. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
TC59LM906AMG-50, TC59LM906AMG
Manufacturer
Toshiba ↗ Semiconductor
File Size
770.12 KB
Datasheet
TC59LM906AMG_ToshibaSemiconductor.pdf
Description
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Note
This datasheet PDF includes multiple part numbers: TC59LM906AMG-50, TC59LM906AMG.
Please refer to the document for exact specifications by model.

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MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Toshiba Semiconductor
Toshiba Semiconductor TC59LM906AMG-50-like datasheet