TC59LM914AMG-37, TC59LM906AMG MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Toshiba Semiconductor

Description

TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC www.DataSheet4U.com 512Mbits Network FCRAM1 (SSTL_18 / HST.
Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory.

📥 Download Datasheet

TC59LM914AMG-37 Datasheet Preview — This datasheet PDF includes multiple part numbers: TC59LM914AMG-37, TC59LM906AMG. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TC59LM914AMG-37, TC59LM906AMG
Manufacturer: Toshiba ↗ Semiconductor
File Size: 770.12 KB
Datasheet: TC59LM906AMG_ToshibaSemiconductor.pdf
Description: MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Note: This datasheet PDF includes multiple part numbers: TC59LM914AMG-37, TC59LM906AMG.
Please refer to the document for exact specifications by model.

Features

* PARAMETER CL = 3 tCK Clock Cycle Time (min) CL = 4 CL = 5 tRC Random Read/Write Cycle Time (min) tRAC Random Access Time (max) IDD1S Operating Current (single bank) (max) lDD2P Power Down Current (max) lDD6 Self-Refresh Current (max) TC59LM914/06 -37 5.5 ns 4.5 ns 3.75 ns 22.5 ns 22.0 ns 280 mA 90 m

TC59LM914AMG-37 Distributors

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TC59LM906AMG MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Toshiba Semiconductor

Toshiba Semiconductor TC59LM914AMG-37-like datasheet