TK12J55D Datasheet - Toshiba Semiconductor

TK12J55D N-Channel MOSFET

TK12J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12J55D Switching Regulator Applications 15.9 MAX. Unit: mm Ф3.2 ± 0.2 1.0 4.5 9.0 2.0 3.3 MAX. 2.0 2.0 ± 0.3 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 550 ±30 12 48 190 317 12 19 150 55 to 150 Unit V V A W mJ A mJ °C °C 1.0 ＋0.3 －0.25 5.45 ± 0.2 1.8 MAX. ＋0.

TK12J55D Features

* other transportation, traffic signaling equipment, equipmen

TK12J55D-ToshibaSemiconductor.pdf