TK12Q60W Datasheet - Toshiba Semiconductor

TK12Q60W, Silicon N-Channel MOSFET

TK12Q60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12Q60W 1.Applications * Switching Voltage Regulators 2..

Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4. Absolute

TK12Q60W-ToshibaSemiconductor.pdf