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TK12X53D MOSFETs

TK12X53D Description

TK12X53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12X53D Switching Regulator Applications 9.2 MAX.Unit: mm 7.0 ± 0.2 4.

TK12X53D Features

* equipment used in the ae

TK12X53D Applications

* 9.2 MAX. Unit: mm 7.0 ± 0.2 4 0.8 MAX. 2.5 0.7 MAX. 9.2 MAX. 2.0 1.5 2.0 0.4 ± 0.1
* Low drain-source ON resistance: RDS (ON) = 0.5 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 525 V) Enhanceme

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MOSFETs Toshiba Semiconductor
Toshiba Semiconductor TK12X53D-like datasheet