TK13A45D Datasheet - Toshiba Semiconductor

TK13A45D N-Channel MOSFET

TK13A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A45D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.38 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain .

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TK13A45D Datasheet (175.23 KB)