TK13A65D - Silicon N-Channel MOSFET

Product Overview

Toshiba Semiconductor

Part number	TK13A65D
Manufacturer	Toshiba Semiconductor
File Size	226.80 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK13A65D Datasheet
Additional preview pages of the TK13A65D datasheet.

(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.4 Ω (typ. ) High forward transfer admittance: |Yfs| = 7.5 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed).

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 20, 2014 |