Datasheet Specifications
- Part number
- TK13A65D
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 226.80 KB
- Datasheet
- TK13A65D-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
TK13A65D MOSFETs Silicon N-Channel MOS (π-MOS) TK13A65D 1.Applications * Switching Voltage Regulators 2..
Features
* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.4 Ω (typ. ) High forward transfer admittance: |Yfs| = 7.5 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain (DTK13A65D Distributors
📁 Related Datasheet
📌 All Tags