TK13H90A1 Datasheet - Toshiba Semiconductor

TK13H90A1 N-Channel MOSFET

TK13H90A1 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(MACHⅡ π-MOSIV) TK13H90A1 Swiching Regulator Applications z Low drain source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.78Ω (typ.) : |Yfs| = 11S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate .

TK13H90A1 Features

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TK13H90A1_ToshibaSemiconductor.pdf