TK130F06K3 Datasheet - Toshiba Semiconductor

TK130F06K3 N-Channel MOSFET

TK130F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV) TK130F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications AEC-Q101 qualified Low drain-source ON resistance: RDS (ON) = 2.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 220 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (T.

TK130F06K3_ToshibaSemiconductor.pdf