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TK45P03M1

MOSFETs

TK45P03M1 Features

* (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 8.0 nC (typ.) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1

TK45P03M1 Datasheet (293.86 KB)

Preview of TK45P03M1 PDF

Datasheet Details

Part number:

TK45P03M1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

293.86 KB

Description:

Mosfets.

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TK45P03M1 MOSFETs Toshiba Semiconductor

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