TK45P03M1 Datasheet - Toshiba Semiconductor

TK45P03M1, MOSFETs

TK45P03M1 MOSFETs Silicon N-Channel MOS (U-MOS-H) TK45P03M1 1.Applications * * DC-DC Converters Desktop Computers 2..

Features

* (1) (2) (3) (4) (5) High-speed switching Low gate charge: QSW = 8.0 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1

TK45P03M1-ToshibaSemiconductor.pdf