TK4A50D Datasheet - Toshiba Semiconductor

TK4A50D N-Channel MOSFET

TK4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain curre.

TK4A50D Features

* RODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIA

TK4A50D Datasheet (266.75 KB)