TK4A60D Datasheet - Toshiba Semiconductor

TK4A60D N-Channel MOSFET

www.DataSheet4U.com TK4A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK4A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-sour.

TK4A60D Features

* c signaling equipment, equipmen

TK4A60D_ToshibaSemiconductor.pdf